Creative Research Lab


We are conducting research in four fields : Memory and AI devices, Energy Harvesting and Stroage, Thin Film Transistor and Spintronic Materials & Devices.

Innovative Ideas


We conduct weekly meetings to analyze the results of our experiments and discuss future directions.

We bring our ideas to experiment


NFMD have two labs. One is for our 4 research teams, and the other is for Energy harvest team. In our Labs, There are more than 14 equipment in our Lab which are 6 sputters, X-ray diffraction, Moke microspope, and Photolitho, Spin coator in Yellow room, Electrical hall measurement device, 3D-printers and so on.

We produce outstanding results.


NFMD currently has 121 papers and 54 foreign and domestic patents.

Graduates working in Fields


59 NFMD alumni graduates from our Lab, and they are in the field of novel functional materials and devices. There are 31 Samsung alumni, 23 SK Hynix alumni, 2 Foreign company, 2 Post doc, and a Professor.

LAB

CREATIVE LAB

Learn about our research fields

Nano frame/spin/oxide material based devices are expected to provide a breakthrough in the electronics industry, which is focused on continuing miniaturization and ultra low power operation.

Nano-scaled spintronic memory and domain wall/skermion-driven AI device, Oxide/non-oxide TFT and logic device. Low-dimensional nanoframe for energy harvesting and storage using 1D & 2D fabric/textiles. .

LEARN MORE
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Memory and Al devices

Machine learning including deep learning is achieved by huge amount of calculation. It needs much lower power consumption and calculation hardware than by software. We are research for Resistive Memory, Selector and Crossbar Array.​

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Energy Harvesting and Storage

Energy harvesting is a technology that collects energy that is wasted from everyday life and uses it as electricity. We are research for Triboelectric nanogenerator and Supercapacitor

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Thin Film Transistor

Thin film transistors based on metal oxide materials have been widely studied as one of the promising materials in the field of integrated circuit and display research because of their excellent electrical and optical properties. We are research for n-type transistor and p-type transistor.

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Spintronic Materials & Devices

Spin orbit torque is the next generation MRAM device that follows the spin transfer torque and is the torque generated by the Spin Hall Effect and the Rashiba Effect. Spin orbit torque has much lower current density than spin transfer torque and has no break down effect. We are research for Sot, Domain Wall motion and magnetic materials.

Published Papers

Patents

Equipments

NFMD Alumni

Statistic

OUR EXPERTISE

Status about the NFMD works

We have published 112 papers in journals.
We also have 54 patents that consist of 7 overseas patents and 47 domestic patents.

NFMD have two labs. One is for our 4 research teams, and the other is for Energy harvest team. In our Labs, There are more than 14 equipment in our Lab which are 6 sputters, X-ray diffraction, Moke microscope, and Photolitho, Spin coator in Yellow room, Electrical hall measurement device, 3D-printers and so on.

59 NFMD alumni graduates from our Lab, and they are in the field of novel functional materials and devices. There are 31 Samsung alumni, 23 SK Hynix alumni, 2 Foreign company, 2 Post doc, and a Professor.

Progress

WORKING PROGRESS

What we do

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Innovative Ideas for experiment

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Conduct Experiments

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Publish papers and Issue patents

Contact

CONTACT FORM

Get in touch with us